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| MMST5551 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features NEW PRODUCT * * * * Epitaxial Planar Die Construction Complementary PNP Type Available (MMST5401) Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package B E SOT-323 A C TOP VIEW E D G H K J L M B C Dim A B C D E G H J K L M Min 0.30 1.15 2.00 0.30 1.20 1.80 0.0 0.90 0.25 0.10 Max 0.40 1.35 2.20 0.40 1.40 2.20 0.10 1.00 0.40 0.25 0.65 Nominal Mechanical Data * * * * * Case: SOT-323, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: K4N Weight: 0.006 grams (approx.) All Dimensions in mm Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage @ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG MMST5551 180 160 6.0 200 200 625 -55 to +150 Unit V V V mA mW K/W C Characteristic Collector Current - Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width 300ms, duty cycle 2%. DS30173 Rev. B-1 1 of 2 MMST5551 Electrical Characteristics @ TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min 180 160 6.0 3/4 3/4 80 80 30 3/4 3/4 3/4 50 100 3/4 Max 3/4 3/4 3/4 50 50 3/4 250 3/4 0.15 0.20 1.0 Unit V V V nA mA nA Test Condition IC = 100mA, IE = 0 IC = 1.0mA, IB = 0 IE = 10mA, IC = 0 VCB = 120V, IE = 0 VCB = 120V, IE = 0, TA = 100C VEB = 4.0V, IC = 0 IC = 1.0mA, VCE = 5.0V IC = 10mA, VCE = 5.0V IC = 50mA, VCE = 5.0V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA VCB = 10V, f = 1.0MHz, IE = 0 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 10V, IC = 10mA, f = 100MHz VCE = 5.0V, IC = 200mA, RS = 1.0kW, f = 1.0kHz NEW PRODUCT Characteristic OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 2) DC Current Gain Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Small Signal Current Gain Current Gain-Bandwidth Product Noise Figure Notes: hFE VCE(SAT) VBE(SAT) 3/4 V V Cobo hfe fT NF 6.0 250 300 8.0 pF 3/4 MHz dB 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width 300ms, duty cycle 2%. DS30173 Rev. B-1 2 of 2 MMST5551 |
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